PhD Position in Radiation Tolerant CMOS Imagers

Catholic University of Leuven


This PhD research project is executed at the ADVISE research group at KU Leuven Campus Geel, in close collaboration with industrial partners. The research group has a strong experience in radiation hardened CMOS circuits and CMOS image sensors. Its mission is to develop circuits and design techniques to withstand the effects of radiation. This includes device and performance degradation effects due to total ionizing dose and single-event effects. The group has built up experience in this field on a broad variety of CMOS circuits, like RF and signal processing circuits, memories, power management and image sensors and collaborates with large research institutes like CERN on this field.


CMOS image sensors are widespread these days. But the limited radiation tolerance of image sensors remains a problem for the use of these sensors in particle physics, nuclear energy or space applications
This Ph.D. project targets to substantially improve the performance of pixels operated in environments with a high dose rate and a high total accumulated dose of ionizing radiation.
Sources of degradation of pixel performance due to radiation will be investigated, experimentally, theoretically and through simulations. 
Techniques to mitigate effects of radiation on the pixel by means of design or technology changes will be proposed and demonstrated. This work involves pixel design and layout, TCAD and circuit simulations of pixels, design of radiation hardened image sensor readout circuits,  and lab characterization of the designed radiation tolerant image sensor before, during and after radiation.
Expected starting date is March 2021.


  • A background in electronic engineering, microelectronics, computer science or physics with a strong interest in microelectronic design
  • Master degree with cum laude
  • Some experience with image sensor design is a plus


  • PhD programme though KU Leuven doctoral school
  • The chance to develop your knowledge on image sensor chip design
  • Opportunity to develop integrated circuits in deep sub-um CMOS technologies and with advanced CMOS image sensor processes
  • Work together with world class experts on the fields of CMOS image sensors and radiation tolerant CMOS circuits


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You can apply for this job no later than February 12, 2021 via the
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  • Employment percentage: Voltijds
  • Location: Geel
  • Apply before: February 12, 2021
  • Tags: Industriële Ingenieurswetenschappen

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